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Microfabrication Facilities & Clean Room Equipment

ICP Deep Reactive Ion Etching (STS)

Important Features

  • Provides high directional etch
  • Features down to 0.1 um or less with aspect ratios of at least 10:1
  • Gases include SF6, C4F8, CHF3, Ar, CF4, O2, CO2, He (for back side cooling)
  • Controllable sidewall profile
  • For Si, oxides, and polymers
  • Oxide, metals, or photo resist may be used as the mask
  • Etch rates up to 6 µm/min

E-beam Evaporator (BOC Edwards)

Important Features

  • For physical vapor deposition process under high vacuum
  • For various metal (Ag, Ag, Al , Ti , Cr, Co) thin film coating
  • Handles materials with high melting points - good for lift-off
  • Highest purity; vacuum better than 1x10-7 torr

Thermal Evaporator (Thermionics VE 90)

Important Features

  • For thermal evaporation of thin metal films with low melting point (Au, Cr, Ag, Al)
  • Two thermal stations with W boats
  • Quartz crystal thickness monitor
  • High vacuum 260 l/sec turbomolecular pump allows pump down within 10 min
  • Digital ionization gauge for high vacuum monitoring
  • Digital ammeter for the evaporation current
  • Evaporation system power: 1kVA, (75 A nominal current)
  • For evaporation data of metals, alloys and oxides click here

Optical Profiler (Zygo NewView 6000)

Important Features

  • For non-contact surface structure and thin film thickness measurements
  • Uses scanning white light interferometry to image and measure the micro structure and topography of surfaces in three dimensions
  • Vertical z-scan measurement range from 0.1 nm to 15000 µm
  • Optical microscope lateral resolution > 0.45 µm to 11.8 µm
  • Data scan rate of up to 85 µm/sec with 0.1 nm height resolution
  • Step height accuracies of better than 0.75%
  • Scan and display areas up to 150 mm x 150 mm

Mask Aligner (Karl Suss MJB-3)

Important Features

  • For contact exposure processes of wafers and substrates
  • Manual mask aligner with 0.6 µm resolution and alignment accuracy of 0.1µm
  • Wafer and substrate handling up to 4" (wafers), 4"x4" (substrates)
  • 3" diameter exposure area
  • Special substrate chucks for pieces, III-V materials, thick substrates, hybrids and HF components
  • High precision X, Y, Q alignment stage and microscope manipulator
  • 350 W mercury short-arch lamp at 365 nm and 405 nm
  • High intensity optical setups for exposures up to 90mW/cm²
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